Ngenxa yokunqaba kwe-moissanite yendalo, uninzi lwe-silicon carbide yenziwe ngokwenziwa. Isetyenziswa njengento yokurhawuzelela, kwaye kutshanje njenge-semiconductor kunye ne-diamond simulant yomgangatho we-gem. Eyona nkqubo ilula yokuvelisa kukudibanisa isanti ye-silica kunye ne-carbon kwi-Acheson graphite electric resistance furnace kubushushu obuphezulu, phakathi kwe-1,600 °C (2,910 °F) kunye ne-2,500 °C (4,530 °F). Amasuntswana e-SiO2 amancinci kwizinto zezityalo (umz. ii-rice husks) anokuguqulwa abe yi-SiC ngokufudumeza ikhabhoni engaphezulu kwi-organic material. I-silica fume, eyimveliso yokuvelisa i-silicon metal kunye ne-ferrosilicon alloys, nayo inokuguqulwa ibe yi-SiC ngokufudumeza nge-graphite kwi-1,500 °C (2,730 °F).
F12-F1200, P12-P2500
0-1mm, 1-3mm, 6/10, 10/18, 200mesh, 325mesh
Ezinye iinkcukacha ezikhethekileyo zingabonelelwa xa ziceliwe.
| Uhlaza | I-Sic | I-FC | I-Fe2O3 |
| F12-F90 | ≥98.50 | <0.20 | ≤0.60 |
| F100-F150 | ≥98.00 | <0.30 | ≤0.80 |
| F180-F220 | ≥97.00 | <0.30 | ≤1.20 |
| F230-F400 | ≥96.00 | <0.40 | ≤1.20 |
| F500-F800 | ≥95.00 | <0.40 | ≤1.20 |
| F1000-F1200 | ≥93.00 | <0.50 | ≤1.20 |
| P12-P90 | ≥98.50 | <0.20 | ≤0.60 |
| P100-P150 | ≥98.00 | <0.30 | ≤0.80 |
| P180-P220 | ≥97.00 | <0.30 | ≤1.20 |
| P230-P500 | ≥96.00 | <0.40 | ≤1.20 |
| P600-P1500 | ≥95.00 | <0.40 | ≤1.20 |
| P2000-P2500 | ≥93.00 | <0.50 | ≤1.20 |
| Iigrits | Unizi lolwapho kuyiwa khona (g/cm3) | Uxinano Oluphezulu (g/cm3) | Iigrits | Unizi lolwapho kuyiwa khona (g/cm3) | Uxinano Oluphezulu (g/cm3) |
| F16 ~ F24 | 1.42~1.50 | ≥1.50 | F100 | 1.36~1.45 | ≥1.45 |
| F30 ~ F40 | 1.42~1.50 | ≥1.50 | F120 | 1.34~1.43 | ≥1.43 |
| F46 ~ F54 | 1.43~1.51 | ≥1.51 | F150 | 1.32~1.41 | ≥1.41 |
| F60 ~ F70 | 1.40~1.48 | ≥1.48 | F180 | 1.31~1.40 | ≥1.40 |
| F80 | 1.38~1.46 | ≥1.46 | F220 | 1.31~1.40 | ≥1.40 |
| F90 | 1.38~1.45 | ≥1.45 |
Ukuba unemibuzo. Nceda uzive ukhululekile ukunxibelelana nathi.