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Ukusebenza okuphezulu kwe-Silicon ye-Carbide ye-Carbide kunye neeGrits
Funda nzulu- (AlO2):≈ 95.5%
- Indawo yokunyibilika:2,000° C
- (SiO2) Akukho Mahala:0.67%
- (Fe2):0.25%
- Ifom yeCrystal:Alpha Alumina
- Ubunzima obuthile:3.95 grm/cc
- Unizi lolwapho kuyiwa khona:132 lbs/ft3 (kuxhomekeke kubungakanani)
- Ukuqina::I-KNOPPS = 2000, MOHS = 9
- Indawo yokunyibilika:2,000° C
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Umgangatho ophezulu weSilicon Carbide yeSilicon eNcinciweyo yoMgangatho wokuHluma nokuSila
Funda nzulu- (AlO2):≈ 95.5%
- Indawo yokunyibilika:2,000° C
- (SiO2) Akukho Mahala:0.67%
- (Fe2):0.25%
- Ifom yeCrystal:Alpha Alumina
- Ubunzima obuthile:3.95 grm/cc
- Unizi lolwapho kuyiwa khona:132 lbs/ft3 (kuxhomekeke kubungakanani)
- Ukuqina::I-KNOPPS = 2000, MOHS = 9
- Indawo yokunyibilika:2,000° C
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I-Silicon Carbide Powder eluhlaza ye-Bonded Silicon Carbide Ivili lokuSila
Funda nzulu- (AlO2):≈ 95.5%
- Indawo yokunyibilika:2,000° C
- (SiO2) Akukho Mahala:0.67%
- (Fe2):0.25%
- Ifom yeCrystal:Alpha Alumina
- Ubunzima obuthile:3.95 grm/cc
- Unizi lolwapho kuyiwa khona:132 lbs/ft3 (kuxhomekeke kubungakanani)
- Ukuqina::I-KNOPPS = 2000, MOHS = 9
- Indawo yokunyibilika:2,000° C
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Ukurisayikilisha okuphezulu kweMedia yonke isayizi eluhlaza yesilicon carbide umgubo ocolekileyo gsic wokupolisha kunye nokusila.
Funda nzulu- Umbala :Luhlaza
- Umxholo:>98%
- Izimbiwa ezisisiseko:α-SiC
- Imo yeCrystal:Ikristale enehexagonal
- Mohs ubunzima:3300kg/mm3
- Ubuninzi bokwenyani:3.2g/mm
- Unizi lolwapho kuyiwa khona:1.2-1.6g/mm3
- Ubunzima obuthile:3.20-3.25
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I-Silicon Carbide Powder eluhlaza
Funda nzulu- Umbala :Luhlaza
- Umxholo:>98%
- Izimbiwa ezisisiseko:α-SiC
- Imo yeCrystal:Ikristale enehexagonal
- Mohs ubunzima:3300kg/mm3
- Ubuninzi bokwenyani:3.2g/mm
- Unizi lolwapho kuyiwa khona:1.2-1.6g/mm3
- Ubunzima obuthile:3.20-3.25
