Ngenxa yokunqaba kwe-moissanite yendalo, uninzi lwe-silicon carbide iyenziwe.Isetyenziswa njenge-abrasive, kwaye kutsha nje njenge-semiconductor kunye nedayimane yokulinganisa umgangatho wegem.Eyona nkqubo ilula yokuvelisa kukudibanisa isanti ye-silica kunye nekhabhoni kwi-Acheson graphite yokumelana nombane kwesithando somlilo kwiqondo lobushushu eliphezulu, phakathi kwe-1,600 °C (2,910 °F) kunye ne-2,500 °C (4,530 °F).Amasuntswana e-SiO2 afanelekileyo kwimathiriyeli yezityalo (umz. amakhoba erayisi) anokuguqulwa abe yi-SiC ngokufudumeza kwikhabhoni egqithisileyo evela kwizinto eziphilayo.Umsi we-silica, ophuma kwimveliso ye-silicon yesinyithi kunye ne-alloys ye-ferrosilicon, nayo inokuguqulwa ibe yi-SiC ngokufudumeza ngegraphite kwi-1,500 °C (2,730 °F).
F12-F1200, P12-P2500
0-1mm, 1-3mm, 6/10, 10/18, 200mesh, 325mesh
Eminye imigqaliselo eyodwa inokubonelelwa ngesicelo.
Igrit | Sic | FC | Fe2O3 |
F12-F90 | ≥98.50 | <0.20 | ≤0.60 |
F100-F150 | ≥98.00 | <0.30 | ≤0.80 |
F180-F220 | ≥97.00 | <0.30 | ≤1.20 |
F230-F400 | ≥96.00 | <0.40 | ≤1.20 |
F500-F800 | ≥95.00 | <0.40 | ≤1.20 |
F1000-F1200 | ≥93.00 | <0.50 | ≤1.20 |
P12-P90 | ≥98.50 | <0.20 | ≤0.60 |
P100-P150 | ≥98.00 | <0.30 | ≤0.80 |
P180-P220 | ≥97.00 | <0.30 | ≤1.20 |
P230-P500 | ≥96.00 | <0.40 | ≤1.20 |
P600-P1500 | ≥95.00 | <0.40 | ≤1.20 |
P2000-P2500 | ≥93.00 | <0.50 | ≤1.20 |
Iigrits | Unizi lolwapho kuyiwa khona (g/cm3) | Ukuxinana okuphezulu (g/cm3) | Iigrits | Unizi lolwapho kuyiwa khona (g/cm3) | Ukuxinana okuphezulu (g/cm3) |
F16 ~ F24 | 1.42~1.50 | ≥1.50 | F100 | 1.36~1.45 | ≥1.45 |
F30 ~ F40 | 1.42~1.50 | ≥1.50 | F120 | 1.34~1.43 | ≥1.43 |
F46 ~ F54 | 1.43~1.51 | ≥1.51 | F150 | 1.32~1.41 | ≥1.41 |
F60 ~ F70 | 1.40~1.48 | ≥1.48 | F180 | 1.31~1.40 | ≥1.40 |
F80 | 1.38~1.46 | ≥1.46 | F220 | 1.31~1.40 | ≥1.40 |
F90 | 1.38~1.45 | ≥1.45 |
Ukuba unayo nayiphi na imibuzo.Nceda uzive ukhululekile ukuqhagamshelana nathi.