Icubic silicon carbide umgubo weceramic ngumgubo ongwevu-luhlaza. Ifomula yayo yeekhemikhali yemolekyuli yile: SiC, ubunzima bemolekyuli 40.10, ubuninzi be-3.2g / cm3, indawo yokunyibilikisa i-2973 ℃, i-coefficient yokwandisa i-thermal 2.98 × 10-6K-1.
I-silicon carbide powder ceramic inobunyulu obuphezulu, ukusabalalisa ubungakanani be-particle encinci, ii-pores ezincinci, umsebenzi ophezulu we-sintering, isakhiwo se-crystal esiqhelekileyo, i-conductivity egqwesileyo ye-thermal, kunye ne-semiconductor engakwazi ukuxhathisa i-oxidation kumaqondo aphezulu okushisa; Iibhovu ze-β-SiC zinde Umlinganiselo omkhulu we-diameter, ukugqiba okuphezulu, umlinganiselo ophezulu we-diameter, kunye nomxholo we-particle ophantsi kwi-whiskers, ukusebenza kwayo kungcono kunezinye nokuba intywiliselwe kwindawo enobungozi, i-industrial abrasive kakhulu kunye nemigodi, okanye ibonakaliswe kumaqondo okushisa angaphezu kwe-1400 ° C. Ii-alloys ze-ceramic ezithengiswayo okanye zetsimbi, kuquka i-alloys yobushushu obuphezulu.
Iimpawu zeSilicon Carbide:
ImvelisoUhlobo | Isilicon Carbide(β-SiCIgrit) | Isilicon Carbide (β-SiCUmgubo) | Isilicon Carbide(a-SiC Umgubo) | |
Umxholo wesigaba | ≥99% | β≥99% | ≥99% | |
ukwakheka kweekhemikhali (wt%) | C | >30 | >30 | - |
S | <0.12 | <0.12 | - | |
P | <0.005 | <0.005 | - | |
Fe2O3 | <0.01 | <0.01 | - | |
Uziinkozo(μm) | Ukwenza ngokwezifiso | |||
Uphawu | Xinli Abrasive |
Ukusetyenziswa okuphambili kwe-silicon carbide: I-Xinli Abrasive inokubonelela nge-silicon carbide kwiintlobo ezahlukeneyo zokusetyenziswa, kubandakanywa i-hexagonal okanye i-rhombohedral α-SiC kunye ne-cubic β-SiC kunye ne-β-SiC whiskers. Izinto ezidityanisiweyo ezenziwe ngesilicon carbide kunye neeplastiki, isinyithi, kunye neekeramics zinokuphucula kakhulu iimpawu zayo ezahlukeneyo. Ngenxa yokuzinza kwayo okuphezulu kwe-thermal, amandla aphezulu, kunye nokuhamba okuphezulu kwe-thermal, isetyenziswa ngokubanzi kwizinto zamandla e-athomu, izixhobo zekhemikhali, ukulungiswa kobushushu obuphezulu, kunye nezixhobo zombane kunye ne-elektroniki. , intsimi ye-semiconductor, izixhobo zokufudumala zombane kunye ne-resistors, njl.
I-cubic silicon carbide ibonelela ngoluhlu lwezicelo kuwo wonke amashishini amaninzi, ngakumbi kumbane onamandla aphezulu, izixhobo zeRF, izixhobo zombane zamandla, iisemiconductor substrates, ubume bobushushu obuphezulu, izinzwa, kunye ne-optoelectronics.
Ukuba unayo nayiphi na imibuzo.Nceda uzive ukhululekile ukuqhagamshelana nathi.