F10-F220 Ukuhombisa kunye nokuSila iSilicon emnyama yeCarbide Grit Umfanekiso obonakalayo

I-F10-F220 Ukupholisha kunye nokuSila i-Silicon emnyama ye-Carbide Grit

Izinto:Sic

Unizi lolwapho kuyiwa khona:1.45-1.56g/cm3

Ukuxinana:3.12 g/cm3

Ubungakanani:F12-F220

Umbala :Mnyama

Ubume:Igrit yeGranular

Umxholo weSiC:>98%

Ukusetyenziswa:Ukupholisha.UkuSila kunye nokuqhunyiswa kweSanti

Inkqubo yeCrystal:Hexagonal

QHAGAMSHELANA NGOKU Khuphela njengePDF

Iinkcukacha zeMveliso

Usetyenziso

Intshayelelo ye-Silicon Carbide emnyama

Ngenxa yokunqaba kwe-moissanite yendalo, uninzi lwe-silicon carbide iyenziwe.Isetyenziswa njenge-abrasive, kwaye kutsha nje njenge-semiconductor kunye nedayimane yokulinganisa umgangatho wegem.Eyona nkqubo ilula yokuvelisa kukudibanisa isanti ye-silica kunye nekhabhoni kwi-Acheson graphite yokumelana nombane kwesithando somlilo kwiqondo lobushushu eliphezulu, phakathi kwe-1,600 °C (2,910 °F) kunye ne-2,500 °C (4,530 °F).Amasuntswana e-SiO2 afanelekileyo kwimathiriyeli yezityalo (umz. amakhoba erayisi) anokuguqulwa abe yi-SiC ngokufudumeza kwikhabhoni egqithisileyo evela kwizinto eziphilayo.Umsi we-silica, ophuma kwimveliso ye-silicon yesinyithi kunye ne-alloys ye-ferrosilicon, nayo inokuguqulwa ibe yi-SiC ngokufudumeza ngegraphite kwi-1,500 °C (2,730 °F).

I-Silicon carbide yeyona nto isetyenziswa kakhulu kwaye enye yezona zinto zoqoqosho.Inokuthiwa yi-corundum okanye isanti e-refractory.I-brittle kwaye ibukhali inombane kunye nobushushu be-conductivity kwiqondo elithile.I-abrasives eyenziwe ngayo ifanelekile ukusebenza kwintsimbi etyhidiweyo, isinyithi esingenantsimbi, ilitye, isikhumba, irabha, njl. ukongeza.

Ukwakhiwa kweMichiza yeSilicon yeCarbide (%)

Igrit	Sic	FC	Fe2O3
F12-F90	≥98.50	<0.20	≤0.60
F100-F150	≥98.00	<0.30	≤0.80
F180-F220	≥97.00	<0.30	≤1.20
F230-F400	≥96.00	<0.40	≤1.20
F500-F800	≥95.00	<0.40	≤1.20
F1000-F1200	≥93.00	<0.50	≤1.20
P12-P90	≥98.50	<0.20	≤0.60
P100-P150	≥98.00	<0.30	≤0.80
P180-P220	≥97.00	<0.30	≤1.20
P230-P500	≥96.00	<0.40	≤1.20
P600-P1500	≥95.00	<0.40	≤1.20
P2000-P2500	≥93.00	<0.50	≤1.20

Isalathiso seMnyama yeSilicon Carbide

Iigrits	Unizi lolwapho kuyiwa khona (g/cm3)	Ukuxinana okuphezulu (g/cm3)	Iigrits	Unizi lolwapho kuyiwa khona (g/cm3)	Ukuxinana okuphezulu (g/cm3)
F16 ~ F24	1.42~1.50	≥1.50	F100	1.36~1.45	≥1.45
F30 ~ F40	1.42~1.50	≥1.50	F120	1.34~1.43	≥1.43
F46 ~ F54	1.43~1.51	≥1.51	F150	1.32~1.41	≥1.41
F60 ~ F70	1.40~1.48	≥1.48	F180	1.31~1.40	≥1.40
F80	1.38~1.46	≥1.46	F220	1.31~1.40	≥1.40
F90	1.38~1.45	≥1.45